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US 8,946,017 B2Granted
Method of making a TFT charge storage memory cell having high-mobility corrugated channel
AssigneeSanDisk 3D LLC
InventorRoy E. Scheuerlein
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Abstract
Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.
Claims13
A method for forming a monolithic three dimensional memory array, the method comprising:
- forming a first plurality of substantially parallel, substantially coplanar rail-shaped dielectric features extending in a first direction;
- conformally depositing a first semiconductor layer over the first rail-shaped dielectric features, wherein the deposited first semiconductor layer has a corrugated shape;
- conformally forming a first charge storage stack over the first semiconductor layer;
- forming a first plurality of substantially parallel, substantially coplanar word lines over the first charge storage stack, the wordlines extending in a second direction different from the first direction.
1 more element
Dependencies are inferred from the claim text.