FinFET device structure and methods of making same

A method of forming a FinFET device, the method comprising:

• forming a first dielectric layer over a substrate;
• forming a first hardmask layer over the first dielectric layer;
• patterning the first hardmask layer into a first plurality of strips, at least two of the first plurality of strips having a first width;
• recessing the first dielectric layer, thereby forming a plurality of raised portions of the first dielectric layer, the plurality of raised portions having a first height, wherein the plurality of raised portions are aligned with the first plurality of strips;
• conformally depositing a second dielectric layer over the first dielectric layer, the first plurality of strips, and the plurality of raised portions;
• and
• removing the horizontal surfaces of the second dielectric layer, wherein top surfaces of the first plurality of strips are exposed, thereby forming a second plurality of strips of the second dielectric layer, the second plurality of strips having a second width.

A method comprising:

• forming a first etch stop layer over a substrate;
• forming a first hardmask layer over the first etch stop layer;
• patterning the first hardmask layer into at least two strips having a first width;
• recessing the first etch stop layer to form at least two raised portions of the first etch stop layer aligned with the at least two strips;
• and
• forming spacers on opposite sidewalls of each of the at least two strips and the at least two raised portions, each of the spacers having second width;
• and
• patterning the substrate using the spacers as a mask to form at least two fins having the second width, wherein a width between adjacent fins is the first width.