Method for forming an integrated circuit having a programmable fuse
AssigneeFreescale Semiconductor, Inc.
InventorsDouglas M. Reber, Mehul D. Shroff, Edward O. Travis
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Abstract
A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last metal interconnect structures.
Claims19
A method for forming an integrated circuit having a programmable fuse, comprising:
- providing an integrated circuit structure comprising first and second exposed interconnects electrically connected respectively to first and second circuits in the integrated circuit structure, where the first and second exposed interconnects are physically separated from one another by an interlayer dielectric layer;
- and
- forming a fuse layer on the integrated circuit structure using a localized deposition process to electrically connect the first and second exposed interconnects without applying an etch process to the fuse layer.
A method of forming an integrated circuit device, comprising using a localized deposition process to form a programmable thin conductive fuse layer on first and second exposed interconnects of the integrated circuit device to electrically connect the first and second exposed interconnects without applying an etch process to the programmable thin conductive fuse layer, where the first and second exposed interconnects are respectively coupled to first and second circuits in the integrated circuit device.
Dependencies are inferred from the claim text.