Fabricating a wafer level semiconductor package having a pre-formed dielectric layer
AssigneeBroadcom Corporation
InventorsKevin (Kunzhong) Hu, Chonghua Zhong, Edward Law
Life of this patent
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Abstract
There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.
Claims25
A method for producing a wafer level semiconductor package, said method comprising:
- forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, said first dielectric layer being a pre-formed dielectric layer between said wafer and said second dielectric layer,
- wherein said pre-formed dielectric layer comprises a build-up material.
A method for producing a wafer level semiconductor package, said method comprising:
- forming a post-fabrication redistribution layer (post-Fab RDL) between a first pre-formed dielectric layer and a second pre-formed dielectric layer affixed over a surface of a wafer,
- wherein at least one of said first pre-formed dielectric layer and said second pre-formed dielectric layer comprises an Ajinomoto™ Build-up Film (ABF).
A method for producing a wafer level semiconductor package, said method comprising:
- forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, said first dielectric layer being a pre-formed dielectric layer between said wafer and said second dielectric layer;
- and
- forming an under-bump metallization (UBM), wherein a shape of the UBM is substantially similar to a shape of the post-Fab RDL.
Dependencies are inferred from the claim text.