Interconnection method for a micro-imaging device

A method for producing an opto-microelectronic micro-imaging device comprising:

• forming a first functional part on the base of a first substrate of a semiconductor on insulator type which comprises a surface layer made of a single-crystal semiconductor and a base layer made of an electrically insulating material laid immediately under the surface layer, with the surface layer and at least a part of the base layer being part of the first functional part, wherein at least one metal oxide semiconductor field effect transistor (MOSFET) is provided from the surface layer and at least one wiring layer, above the surface layer, wherein at least a first electric connection pad is formed and is so configured as to participate in an electric connection of one transistor electrode with one pixel electrode,
• transferring the first functional part by making an upper face of the first functional part located on one side of the first functional part opposite the base layer integral with a second substrate,
• thinning the first substrate on the face of the first substrate opposite the second substrate until the base layer is reached while preserving at least a part of the thickness of the base layer,
• forming, on the base layer, a second functional part comprising the pixel electrode and provided with at least a second electric connection pad so configured as to participate in the electric connection of the transistor electrode with the pixel electrode,
• wherein:
• the method further comprises, prior to the transferring the first functional part, forming at least one via connected to the first electric connection pad and going through the first functional part from the first electric connection pad to the base layer included, and
• the forming the second functional part comprises the connection of the via with the second electric connection pad, with the width of the second electric connection pad being selected so as to be at least equal to twice a maximum flat deformation supported by the first functional part during the transfer operation.