Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
AssigneeSuniva, Inc.
InventorsDaniel L. Meier, Ajeet Rohatgi
Life of this patent
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Abstract
A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.
Claims9
A method for making a solar cell comprising:
- forming a doped layer into a doped substrate, wherein the conductivity type of the doped layer is opposite the conductivity type of at least an adjacent portion of the doped substrate;
- forming a first oxide layer on a first surface of the substrate proximate the doped layer and forming a second oxide layer on a second surface of the substrate opposite the doped layer;
- removing the first and second oxide layers to expose the first and the second surfaces of the substrate;
- forming a first undoped amorphous layer to the first surface of the substrate proximate the doped layer;
- forming a second undoped amorphous layer to the second surface of the substrate opposite the doped layer;
- forming a first doped amorphous layer on the first undoped amorphous layer, wherein the conductivity type of the first doped amorphous layer is the same as the conductivity type of the doped layer;
- and
- forming a second doped amorphous layer on the second undoped amorphous layer, wherein the conductivity type of the second doped amorphous layer is opposite the conductivity type of the doped layer.
A method for making a solar cell comprising:
- forming a doped layer into a doped substrate, wherein the conductivity type of the doped layer is opposite the conductivity type of at least an adjacent portion of the doped substrate;
- forming a first undoped amorphous layer to a first surface of the substrate proximate the doped layer;
- forming a second undoped amorphous layer to a second surface of the substrate opposite the doped layer;
- forming a first doped amorphous layer on the first undoped amorphous layer, wherein the conductivity type of the first doped amorphous layer is the same as the conductivity type of the doped layer;
- and
- forming a second doped amorphous layer on the second undoped amorphous layer, wherein the conductivity type of the second doped amorphous layer is opposite the conductivity type of the doped layer.
Dependencies are inferred from the claim text.