Method of manufacturing backside illuminated active pixel sensor array

A method of manufacturing a backside-illuminated active pixel sensor array, the method comprising:

• (a) forming a semiconductor substrate that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers forming boundaries between pixels by being disposed between the adjacent light-receiving devices, comprising:
• arranging a first support substrate;
• forming the semiconductor substrate on the first support substrate;
• and
• forming the one or more pixel isolating layers by implanting an impurity into the rear surface of the semiconductor substrate;
• (b) forming a wiring layer on the front surface of the semiconductor substrate, comprising:
• forming a first insulating layer on the rear surface of the semiconductor substrate;
• forming a second support substrate on the first insulating layer;
• removing the first support substrate;
• and
• forming the wiring layer on the front surface of the semiconductor substrate;
• and
• (c) forming a light filter layer on the rear surface of the semiconductor substrate,
• wherein portions or all of the one or more pixel isolating layers are second conductive type impurity doped regions formed by ion implantation at the rear surface of the semiconductor substrate.

A method of manufacturing a backside-illuminated active pixel sensor array, the method comprising:

• (a) forming a semiconductor substrate that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers forming boundaries between pixels by being disposed between the adjacent light-receiving devices, comprising:
• arranging a first support substrate;
• forming the semiconductor substrate on the first support substrate;
• and
• forming portions of the one or more pixel isolating layers by implanting an impurity into the rear surface of the semiconductor substrate;
• (b) forming a wiring layer on the front surface of the semiconductor substrate, comprising:
• forming a first insulating layer on the rear surface of the semiconductor substrate;
• forming a second support substrate on the first insulating layer;
• removing the first support substrate;
• and
• forming the wiring layer on the front surface of the semiconductor substrate;
• and
• (c) forming a light filter layer on the rear surface of the semiconductor substrate,
• wherein portions or all of the one or more pixel isolating layers are second conductive type impurity doped regions formed by ion implantation at the rear surface of the semiconductor substrate.