Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
AssigneeElement Six Technologies US Corporation
InventorsDaniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
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Abstract
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
Claims22
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a first layered structure layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
- (b) depositing a nucleating layer over at least a portion of said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
- (c) depositing a synthetic diamond layer over said nucleating layer;
- and
- (d) depositing a second layered structure layer over said first layered structure layer, said second layered structure layer including at least one layer including said wide-gap semiconductor material.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
- (b) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
- (c) depositing a synthetic diamond layer over said nucleating layer;
- and
- (d) removing said substrate layer.
Dependencies are inferred from the claim text.