Method for producing a group III nitride semiconductor light-emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorsNaoyuki Nakada, Yasuhisa Ushida
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Abstract
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.
Claims13
A method for producing a Group III nitride semiconductor light-emitting device comprising a p cladding layer and a p contact layer, the method comprising:
- forming the p cladding layer so as to have a hexagonal columnar concave and convex configuration thereon by reversing a polarity in at least a portion of crystals through crystal growth by Mg doping;
- and
- forming the p contact layer along the hexagonal columnar concave and convex configuration on the p cladding layer,
- wherein the p cladding layer is grown at a pressure of 5 kPa to 70 kPa,
- wherein an amount of Mg doping in the p cladding layer is in a range from 1.8×1020/cm3 to 10×1020/cm3, and
- wherein the p contact layer comprises a hexagonal columnar concave and convex configuration on the p cladding layer and the p contact layer is grown at a normal pressure.
Dependencies are inferred from the claim text.