Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a first circuit layer over a first surface of a semiconductor substrate,
• (b) forming a plurality of through-electrodes electrically coupled to the first circuit layer in the semiconductor substrate,
• (c) forming a second circuit layer electrically coupled to the through-electrodes over the first circuit layer,
• (d) forming a plurality of first electrodes electrically coupled to the second circuit layer over the second circuit layer,
• (e) grinding a second surface of the semiconductor substrate opposite to the first surface to expose a portion of each of the through-electrodes and forming a plurality of second electrodes,
• (f) testing an electrically coupling state between the first electrodes and the second electrodes,
• (g) dicing the semiconductor substrate into a plurality of semiconductor chips,
• (h) providing a wiring substrate, and
• (i) mounting, among the semiconductor chips, semiconductor chips determined non-defective in the step (f) over a first main surface of the wiring substrate and electrically coupling the wiring substrate to the first electrodes,
• wherein the electrode pitch between the first electrodes is wider than the electrode pitch between the second electrodes, and
• wherein in the step (f), conduction between the second electrodes is checked while short-circuiting between the first electrodes.