Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
AssigneeFujitsu Limited
InventorsKoji Nozaki, Miwa Kozawa
Life of this patent
Estimating the term…
Abstract
The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
Claims11
A method for forming a resist pattern, comprising:
- forming a resist pattern on a surface of a workpiece to be processed, and
- applying a resist pattern thickening material over the surface of the workpiece so as to cover the surface of the resist pattern,
- wherein the resist pattern thickening material comprises a resin,
- and a compound represented by the following General Formula (1), the resist pattern thickening material is nonaqueous and contains no acid generator and no crosslinker,
- where “X” represents a functional group represented by the following Structural Formula (1);
- “Y” represents at least any one of a hydroxyl group, an amino group, an alkyl group-substituted amino group, an alkoxy group, an alkoxycarbonyl group, and an alkyl group, and the number of substituents in an amino group substituted by alkyl groups is an integer of 1 or 2;
- “m” is an integer of 1 or more;
- and “n” is an integer of 0 or more,
- where “R1” and “R2” may be same to each other or different from each other and respectively represent a hydrogen atom or a substituent group;
- “Z” represents at least any one of a hydroxyl group, an amino group, an alkyl group-substituted amino group, and an alkoxy group, and the number of substituents in an amino group substituted by alkyl groups is an integer of 1 or 2,
- wherein the resin is the polyparahydroxystyrene resin.
A method for manufacturing a semiconductor device comprising:
- forming a resist pattern on a surface of a workpiece to be processed, and then applying a resist pattern thickening material over the surface of the workpiece so as to cover the surface of the resist pattern to thereby thicken the resist pattern, and
- patterning the surface of the workpiece by etching the surface of the workpiece using the thickened resist pattern as a mask,
- wherein the resist pattern thickening material comprises a resin,
- and a compound represented by the following General Formula (1), the resist pattern thickening material is nonaqueous and contains no acid generator and no crosslinker,
- where “X” represents a functional group represented by the following Structural Formula (1);
- “Y” represents at least any one of a hydroxyl group, an amino group, an alkyl group-substituted amino group, an alkoxy group, an alkoxycarbonyl group, and an alkyl group, and the number of substituents in an amino group substituted by alkyl groups is an integer of 1 or 2;
- “m” is an integer of 1 or more;
- and “n” is an integer of 0 or more,
- where “R1” and “R2” may be same to each other or different from each other and respectively represent a hydrogen atom or a substituent group;
- “Z” represents at least any one of a hydroxyl group, an amino group, an alkyl group-substituted amino group, and an alkoxy group, and the number of substituents in an amino group substituted by alkyl groups is an integer of 1 or 2,
- wherein the resin is the polyparahydroxystyrene resin.
Dependencies are inferred from the claim text.