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US 8,945,808 B2Granted
Self-topcoating resist for photolithography
AssigneeInternational Business Machines Corporation
InventorsRobert Allen David, Phillip Joe Brock, Carl E Larson, Daniel Paul Sanders, Ratnam Sooriyakumaran, Linda Karin Sundberg, Hoa D Truong, Gregory Michael Wallraff
Life of this patent
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Abstract
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
Claims16
A resist composition comprising:
- a) a photoresist polymer that does not comprise a silsesquioxane polymer;
- b) at least one photoacid generator;
- c) a solvent;
- and
- d) a resist additive compound including a polymer, oligomer or cage structure having the following structure A:
- wherein,
- each Z1, Z2, and Z3 independently represents a member selected from the group consisting of linear, branched, or cyclic alkylene, and linear, branched or cyclic heteroalkylene;
- n1, n2 and n3 independently represent the number of repeat units of each type in the polymer, oligomer, or cage structure;
- and n1+n2+n3≧2;
- X1, X, and X3 independently represents a member selected from the group consisting of linear, branched, or cyclic alkylene, linear, branched or cyclic heteroalkylene, carboxyl, and carbonyl;
- R1 is a moiety containing a fluoroalcohol group that is unprotected or partially or fully protected with an acid-labile group;
- and
- R2 is selected from H, or a moiety containing carboxylic acid, sulfonamide, fluoroalcohol, or sulfonic acid, that is unprotected or partially or fully protected with an acid-labile group;
- and
- R3 is a nonfluorinated or partially fluorinated or perfluorinated functionality, other than a fluorinated ether, that is acid-labile or non-acid labile, wherein the functionality does not comprise an unsaturated hydrocarbon group;
- provided that
- the resist additive compound contains a fluorocarbyl moiety other than a fluorinated ether;
- if Z1, Z2 and/or Z3 is
- then X1 and R1 together, X2 and R2 together, and/or X3 and R3 together can represent hydrogen;
- if Z1, Z2 and/or Z3 is
- and X1, X2 and/or X3 is alkylene, then R1, R2 and R3 are not —C(CF3)2—OH;
- if X1, X2 and/or X3 is carboxyl, then R1, R2 and R3 are not norbornyl substituted by —CH2—C(CF3)2—OH;
- and
- If Z1, Z2 and/or Z3 is linear alkylene, and X1, X2 and/or X3 is methylene, then R1, R2 and R3 are not —C(CF3)2—OH;
- and provided that the compound does not comprise a structure selected from the group consisting of:
22 more elements
A resist composition comprising:
- a) a photoresist polymer;
- b) at least one photoacid generator;
- c) a solvent;
- and
- d) a resist additive compound having one of the following structures:
- wherein a:b=2-98 mole %:
- 98-2 mole %, and a+b=100 mole %;
- wherein c:d=2-98 mole %:98-2 mole %, and c+d=100 mole %;
- wherein e:f=2-98 mole %:98-2 mole %, and e+f=100 mole %;
- wherein g:h=2-98 mole %:98-2 mole %, and g+h=100 mole %;
- wherein i:j=2-98 mole %:98-2 mole %, and i+j=100 mole %;
- wherein k:l=2-98 mole %:98-2 mole %, and k+l=100 mole %;
- wherein m:n:o=2-96 mole %:96-2 mole %:2-96 mole %, and m+n+o=100 mole %;
- wherein p:q=2-98 mole %:98-2 mole %, and p+q=100 mole %;
- wherein r:s=2-98 mole %:98-2 mole %, and r+s=100 mole %;
- wherein t:u:v=2-96 mole %:96-2 mole %:2-96 mole %, and t+u+v=100 mole %;
- wherein w:x=2-98 mole %:98-2 mole %, and w+x=100 mole %;
- wherein mm:nn=2-98 mole %:98-2 mole %, and mm+nn=100 mole %;
- wherein qq:rr=2-98 mole %:98-2 mole %, and qq+rr=100 mole %;
- wherein ss:tt=2-98 mole %:98-2 mole %, and ss+tt=100 mole %;
- wherein uu:vv:ww=2-96 mole %:96-2 mole %:2-96 mole %, and uu+vv+ww=100 mole %;
- and
- wherein xx:yy:zz=2-96 mole %:96-2 mole %:2-96 mole %, and xx+yy+zz=100 mole %.
20 more elements
Dependencies are inferred from the claim text.