Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
AssigneeASML Netherlands B.V.
InventorsTsann-Bim Chiou, Mircea Dusa, Alek Chi-Heng Chen
Life of this patent
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Abstract
In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.
Claims19
A method of preparing an exposure pattern for a device manufacturing method using a lithographic apparatus, the method comprising:
- receiving first data representing a first pattern to be used to define a first layer of a device using the lithographic apparatus;
- receiving second data representing a second pattern to be used to define a second layer of a device using the lithographic apparatus, the second layer being associated with the first layer;
- first assigning features of the first pattern to a first set and a second set according to a first rule;
- second assigning features of the second pattern to a third set and a fourth set according to a second rule, wherein the second rule takes account of the results of the first assigning.
A computer program for programming an exposure pattern for a device manufacturing method using a lithographic apparatus, the program comprising code that, when executed by a computer system, instructs the computer system to:
- receive first data representing a first pattern to be used to define a first layer of a device using the lithographic apparatus;
- receive second data representing a second pattern to be used to define a second layer of a device using the lithographic apparatus, the second layer being associated with the first layer;
- first assign features of the first pattern to a first set and a second set according to a first rule;
- second assign features of the second pattern to a third set and a fourth set according to a second rule, wherein the second rule takes account of the results of the first assigning.
Dependencies are inferred from the claim text.