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US 8,945,700 B2Granted
Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials
AssigneeMicron Technology, Inc.
InventorsDan B. Millward, Donald L. Westmoreland
Life of this patent
Estimating the term…
Abstract
Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.
Claims17
A polymeric material, comprising:
- a self-assembled block copolymer material within a trench overlying a substrate, the trench having sidewalls, ends, a floor, a width and a length, the self-assembled block copolymer material comprising at least one line of half-cylinders of a minority block in a matrix of a majority block of the block copolymer, the at least one line of half-cylinders oriented parallel to the trench floor and extending the length of the trench, the half-cylinders having a face oriented toward and wetting the trench floor.
A semiconductor structure, comprising:
- a material over a substrate defining at least one trench in the material, the at least one trench having a trench floor, sidewalls and ends;
- and
- a polymeric material within the trench comprising a self-assembled block copolymer material comprising at least one line of half-cylinders of a minority block in a matrix of a majority block of the block copolymer material, the at least one line of half-cylinders oriented parallel to the trench floor and extending the length of the trench, the half-cylinders having a face oriented toward and wetting the trench floor.
Dependencies are inferred from the claim text.