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US 8,945,461 B2Granted
Method for producing β-sialon phosphor
AssigneeDenki Kagaku Kogyo Kabushiki Kaisha
InventorsTomohiro Nomiyama, Suzuya Yamada, Hisayuki Hashimoto
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AssigneeDenki Kagaku Kogyo Kabushiki Kaisha
InventorsTomohiro Nomiyama, Suzuya Yamada, Hisayuki Hashimoto
Estimating the term…
Provided is a production method of a β-sialon phosphor that europium ions are solid-solved in β-sialon, including a mixing process for mixing raw materials of the β-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the β-sialon phosphor; a HIP treatment process in which the β-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the β-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the β-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a β-sialon phosphor, a β-sialon phosphor excellent in luminescence intensity is obtained.
A production method of a β-sialon phosphor that europium ions are solid-solved in β-sialon, comprising:
Dependencies are inferred from the claim text.
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Coating or impregnation: with inorganic materials
Oxynitrides of metals, boron or silicon: silicon aluminium oxynitrides, i.e. sialons
Based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides: based on silicon oxynitride, e.g. SIALONS
Pressure sintering: hot isostatic pressing
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About 5 years of term left · ends 21 Oct 2031 (estimated)
This application is a National Phase of PCT International Patent Application No. PCT/JP2010/069448 filed Nov. 1, 2010, and claims priority benefit to Japanese Patent Application No. 2009-260243, filed Nov. 13, 2009, in the Japanese Office, the disclosures of which are incorporated herein by reference.
1. Field of the Invention
Present invention relates to a production method of a β-sialon phosphor (β-type sialon phosphor). More specifically, it relates to a production method of a β-sialon phosphor excellent in luminescence intensity upon receiving light from LED (Light Emitting Diode) and the like to emit light.
Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to explain the present invention by referring to the figures.
The production method of the β-sialon phosphor of the present invention is a production method of a β-sialon phosphor that Eu2+ is solid-solved in β-sialon expressed by Si6-zAlzOzN8-z, including a mixing process for mixing raw materials of the β-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the β-sialon phosphor; a HIP treatment process in which the β-sialon phosphor after the burning process is subjected to a HIP (Hot Isostatic Pressing) treatment; an annealing process in which the β-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the β-sialon phosphor after the annealing process is subjected to an acid treatment.
β-sialon is one in which Al is substituted and solid-solved in a Si position of β-type silicon nitride, and O is substituted and solid-solved in a N position thereof. Since there are two formula weight atoms in a unit cell, β-sialon is expressed as the general formula “Si6-zAlzOzN8-z”. The composition z is preferably 0 to 4.2, and the mole ratio of (Si, Al)/(N,O) must maintain 3/4.