Semiconductor composition
AssigneeSamsung Electronics Co., Ltd.
InventorsYiliang Wu, Sandra J. Gardner, Anthony J. Wigglesworth, Ping Liu, Nan-Xing Hu
Life of this patent
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Abstract
An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.
Claims17
An electronic device comprising a semiconducting layer, the semiconducting layer comprising:
- an amorphous polymer binder;
- and
- a crystalline small molecule semiconductor having an average crystal size which is at least two times smaller than that of the small molecule semiconductor in a semiconducting layer that has been thermally treated at a temperature greater than the melting temperature of the small molecule semiconductor;
- wherein the semiconducting layer has a field-effect mobility of at least 0.2 cm2/V·sec, and
- wherein the crystalline small molecule semiconductor has the structure of Formula (II):
- wherein R2 and R3 are independently selected from alkenyl, substituted alkenyl, alkenyl, substituted alkenyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, alkylthio, trialkylsilyl, ketonyl, cyano, and halogen.
An electronic device comprising a semiconducting layer, the semiconducting layer comprising:
- an amorphous polymer binder;
- and
- a crystalline small molecule semiconductor;
- wherein an x-ray diffraction pattern of the semiconducting layer has a primary diffraction peak with a Full Width at Half Maximum (FWHM) that is at least two times greater than a FWHM of a semiconducting layer comprising the small molecule semiconductor that has been thermally treated at a temperature greater than the melting temperature of the small molecule semiconductor,
- wherein the semiconducting layer has a field-effect mobility of at least 0.2 cm2/V·sec, and
- wherein the small molecule semiconductor has the structure of Formula (II):
- wherein R2 and R3 are independently selected from alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, alkylthio, trialkylsilyl, ketonyl, cyano, and halogen.
An electronic device comprising a semiconducting layer, the semiconducting layer comprising:
- an amorphous polymer binder;
- and
- a small molecule semiconductor having the structure of Formula (II):
- wherein R2 and R3 are independently selected from alkenyl, substituted alkenyl, alkynyl, substituted alkenyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, alkylthio, trialkylsilyl, ketonyl, cyano, and halogen,
- wherein the small molecule semiconductor has an average crystal size of 100 nanometers or less in the semiconductor layer.
Dependencies are inferred from the claim text.