Etching method, etching apparatus, and ring member
AssigneeTokyo Electron Limited
InventorsAyuta Suzuki, Songyun Kang, Tsuyoshi Moriya, Nobutoshi Terasawa, Yoshiaki Okabe
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AssigneeTokyo Electron Limited
InventorsAyuta Suzuki, Songyun Kang, Tsuyoshi Moriya, Nobutoshi Terasawa, Yoshiaki Okabe
Estimating the term…
Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.
A method of dry-etching an etching target film formed on a substrate, comprising:
A method of dry-etching an etching target film formed on a substrate, comprising:
A dry-etching method comprising:
Dependencies are inferred from the claim text.