Vacuum exhaust method and a substrate processing apparatus therefor

#The present invention relates to a vacuum exhaust method and a substrate processing apparatus therefor; and more particularly, to a vacuum exhaust method that vacuum-exhausts a vacuum processing chamber of a substrate processing apparatus.

#In a substrate processing apparatus such as a plasma ashing apparatus or a CVD (Chemical Vapor Deposition) apparatus for performing a required process on a substrate, e.g., a semiconductor substrate, a flat panel display substrate, or the like, there is known that when a vacuum processing chamber is evacuated to vacuum after maintenance accompanied by opening to the atmosphere, particle contamination is caused by, e.g., dispersion of particles.

#The attachment of particles onto parts included in the chamber contaminates a substrate (hereinafter, referred to as “wafer”) in subsequent processes or makes it difficult for the wafer to be adsorbed on a surface of a mounting table. This may cause a process failure or abnormal discharge.

#The objects and features of the present invention will become apparent from the following description of preferred embodiments, given in conjunction with the accompanying drawings, in which:

#FIG. 1 is a view schematically illustrating a configuration of a substrate processing apparatus in accordance with an embodiment of the present invention;

#FIG. 2 is a side view of a protection member;

#Hereinafter, embodiments of the present invention will be described in more detail with reference to accompanying drawings which forms a part hereof.

#FIG. 1 is a view schematically illustrating a substrate processing apparatus in accordance with an embodiment of the present invention.

#Referring to FIG. 1, the substrate processing apparatus 10 includes a chamber (processing chamber) 11; a mounting table (stage) 12 arranged in the chamber 11 to mount a wafer W thereon; an enclosure 13 arranged along the circumference of the stage 12; a focus ring 14 and a cover ring 15 provided on top of the enclosure 13 and an outer peripheral portion of the stage 12 in a manner that they surround the wafer W (not shown); a ceiling member (shower head) 16 arranged at the upper portion of the chamber 11 opposite to the stage 12; sidewall member 17 of the chamber; a sidewall member 19 of the stage 12; and a shutter 18 provided at a transfer port through which the wafer W is loaded and unloaded into and from the chamber 11.