Abrasive article for ultra high material removal rate grinding operations

#1. Field of the Disclosure

#The following is directed to abrasive articles, and particularly bonded abrasive articles suitable for conducting high-speed grinding operations.

#2. Description of the Related Art

#The present disclosure may be better understood, and its numerous features and advantages made apparent to those skilled in the art by referencing the accompanying drawings.

#FIG. 1 includes a plot of average power (kW) versus material removal rate (mm3/s/mm) for conventional bonded abrasive articles and an abrasive article according to an embodiment.

#FIG. 2 includes a plot of G-ratio (volume of material removed/volume of wheel wear) versus material removal rate (mm3/s/mm) for conventional bonded abrasive articles and an abrasive article according to an embodiment.

#The use of the same reference symbols in different drawings indicates similar or identical items.

#The following is directed to bonded abrasive articles, which may be suitable for grinding and shaping of workpieces. Notably, the bonded abrasive articles of embodiments herein can incorporate abrasive particles within a bond material. Suitable applications for use of the bonded abrasive articles of the embodiments herein include grinding operations including for example, centerless grinding, cylindrical grinding, crankshaft grinding, various surface grinding operations, bearing and gear grinding operations, creepfeed grinding, and various toolroom applications.

#According to an embodiment, the method of forming a bonded abrasive article of an embodiment can be initiated by forming a mixture of suitable compounds and components to form a bond material. The bond can be formed of compounds of inorganic material, such as oxide compounds. For example, one suitable oxide material can include silicon oxide (SiO2). In accordance with an embodiment, the bond material can be formed from not greater than about 62 wt % silicon oxide for the total weight of the bond material. In other embodiments, the content of silicon oxide can be less, such as not greater than about 60 wt %, not greater than about 59 wt %, or even not greater than about 58 wt %. Still, in certain embodiments the bond material may be formed from at least about 45 wt %, on the order of at least about 47 wt %, at least about 48 wt %, or even at least about 49 wt %, at least about 50 wt %, at least about 52 wt % silicon oxide for the total weight of the bond material. It will be appreciated that the amount of silicon oxide can be within a range between any of the minimum and maximum percentages noted above.