Chemical-mechanical polishing pad and chemical-mechanical polishing method

Abstract

A chemical mechanical polishing pad includes a polishing layer, a recess being formed in a polishing surface of the polishing layer, the polishing layer including a surface layer that forms at least an inner side of the recess, and a ratio (D1/D2) of an average opening ratio D1(%) to an average opening ratio D2(%) being 0.01 to 0.5, the average opening ratio D1 being an average opening ratio of the inner side of the recess when the polishing layer has been immersed in water at 23° C. for 1 hour, and the average opening ratio D2 being an average opening ratio of a cross section of the polishing layer that does not intersect the surface layer when the cross section has been immersed in water at 23° C. for 1 hour.

Dependencies are inferred from the claim text.