Back to results
US 8,944,003 B2Granted
Remote plasma system and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFei-Fan Chen, Wen-Sheng Wu, Chien Kuo Huang
Life of this patent
Estimating the term…
Abstract
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.
Claims20
A remote plasma system comprising:
- an inlet port;
- an inner housing coupled to the inlet port to generate a plasma, the inner housing comprising beta-phase aluminum oxide;
- and
- an outlet port coupled to the inner housing.
1 more element
A remote plasma system comprising:
- a semiconductor processing chamber;
- a showerhead within the semiconductor processing chamber, the showerhead comprising a plasma inlet to receive a plasma precursor;
- and
- a plasma generator coupled to the plasma inlet, the plasma generator comprising a plasma inducing device and an inner housing, the inner housing comprising sodium, aluminum, and oxygen atoms.
1 more element
A remote plasma system comprising:
- a plasma generating unit comprising:
- a plasma generating region;
- and
- a housing around the plasma generating region, the housing comprising a beta-phase aluminum oxide;
- and
- a showerhead connected to the plasma generating unit.
3 more elements
Dependencies are inferred from the claim text.