Writing scheme for phase change material-content addressable memory
AssigneeInternational Business Machines Corporation
InventorsChung H. Lam, Jing Li, Robert K. Montoye
Life of this patent
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Abstract
A system for programming a phase change material-content addressable memory (PCM-CAM). The system includes a receiving unit for receiving a word to be written in the PCM-CAM. The word includes low bits represented by a low resistance state in the PCM-CAM and high bits represented by a high resistance state in the PCM-CAM. The system includes a writing unit configured to repeatedly write the low bits in memory cells of the PCM-CAM until the resistance of the memory cells are below a threshold value, and to write high bits in memory cells of the PCM-CAM only once.
Claims9
A system for programming a Phase Change Material-Content Addressable Memory (PCM-CAM) comprising:
- a receiving unit for receiving a word to be written in a PCM-CAM, the word including low bits represented by a low resistance state in the PCM-CAM and high bits represented by a high resistance state in the PCM-CAM;
- and
- a writing unit configured to repeatedly write the low bits in memory cells of the CAM-PCM until the resistance of the memory cells are below a threshold value and to write high bits in the memory cells of the CAM-PCM only once.
Dependencies are inferred from the claim text.