Data storing method, and memory controller and memory storage apparatus using the same

A memory controller for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erase units, each of the physical erase units has a plurality of physical program units, the physical program units comprise a plurality of lower physical program units and a plurality of upper physical program units, a speed of writing data into the lower physical program units is greater than a speed of writing data into the upper physical program units, and the memory controller comprises:

• a host interface configured to couple to a host system;
• a memory interface configured to couple to the rewritable non-volatile memory module;
• and
• a memory management circuit coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to configure a plurality of logical addresses and receive a page data from the host system, wherein the page data is stored in a first logical address of the logical addresses according to an instruction of the host system,
• wherein the memory management circuit is further configured to select a first physical erase unit from the physical erase units, and the first physical erase unit belongs to a spare physical erase unit,
• wherein the memory management circuit is further configured to determine whether a storage status of the rewritable non-volatile memory module is a predetermined status,
• wherein if the storage status of the rewritable non-volatile memory module is the predetermined status, the memory management circuit is further configured to use a first writing mode to write the page data into a first physical program unit of the physical program units in the first physical erase unit and map the first logical address to the first physical program unit,
• wherein in the first writing mode the lower physical program units of the first physical erase unit are applied for writing data, and the upper physical program units of the first physical erase unit are not applied for writing data,
• wherein if the storage status of the rewritable non-volatile memory module is not the predetermined status, the memory management circuit is further configured to use a second writing mode to write the page data into a second physical program unit of the physical program units in the first physical erase unit and map the first logical address to the second physical program unit,
• wherein in the second writing mode the lower physical program units and the upper physical program units of the first physical erase unit are applied for writing data.

A memory storage apparatus comprising:

• a connector configured to couple to a host system;
• a rewritable non-volatile memory module comprising a plurality of physical erase units, each of the physical erase units having a plurality of physical program units, the physical program units comprising a plurality of lower physical program units and a plurality of upper physical program units, a speed of writing data into the lower physical program units is greater than a speed of writing data into the upper physical program units;
• and
• a memory controller coupled to the connector and the rewritable non-volatile memory module,
• wherein the memory controller is configured to configure a plurality of logical addresses and receive a page data from the host system, and the page data is stored in a first logical address of the logical addresses according to an instruction of the host system,
• wherein the memory controller is further configured to select a first physical erase unit from the physical erase units, and the first physical erase unit belongs to a spare physical erase unit,
• wherein the memory controller is further configured to determine whether a storage status of the rewritable non-volatile memory module is a predetermined status,
• wherein if the storage status of the rewritable non-volatile memory module is the predetermined status, the memory controller is further configured to use a first writing mode to write the page data into a first physical program unit of the physical program units in the first physical erase unit and map the first logical address to the first physical program unit,
• wherein in the first writing mode the lower physical program units of the first physical erase unit are applied for writing data, and the upper physical program units of the first physical erase unit are not applied for writing data,
• wherein if the storage status of the rewritable non-volatile memory module is not the predetermined status, the memory controller is further configured to use a second writing mode to write the page data into a second physical program unit of the physical program units in the first physical erase unit and map the first logical address to the second physical program unit,
• wherein in the second writing mode the lower physical program units and the upper physical program units of the first physical erase unit are applied for writing data.