Nitride semiconductor light-emitting device
AssigneePanasonic Corporation
InventorsHideki Kasugai, Kenji Orita, Hiroshi Ohno, Kazuhiko Yamanaka
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Abstract
A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.
Claims3
A nitride semiconductor light-emitting device having an optical waveguide, the nitride semiconductor light-emitting device comprising, in the following order, at least:
- a first cladding layer;
- an active layer;
- and
- a second cladding layer,
- wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer;
- wherein the nitride semiconductor comprises AlxInyGa1-x-yN, where 0<x≦0.82, 0<y≦0.18, and 0≦1-x-y<1;
- wherein a material of the transparent conductor is one of tin-added indium oxide, antimony-added tin oxide, and zinc oxide;
- wherein the transparent conductive layer has a film thickness greater than 100 nm.
Dependencies are inferred from the claim text.