Bit line current trip point modulation for reading nonvolatile storage elements

A non-volatile storage system, comprising:

• a three dimensional memory structure comprising a plurality of non-volatile storage elements, the non-volatile storage elements have a charge storage area above a semiconductor substrate;
• a plurality of bit lines connected to the non-volatile storage elements;
• one or more managing circuits in communication with the non-volatile storage elements, the one or more managing circuits include a sensing circuit, the one or more managing circuits are configured to obtain information about the distance of a non-volatile storage element from the sensing circuit, the one or more managing circuits are configured to determine a sensing parameter at least in part based on the information obtained about the distance of the non-volatile storage element from the sensing circuit and configure a sensing process for the sensing circuit based on the determined sensing parameter;
• to perform the configured sensing process the one or more managing circuits are configured to pre-charge a charge storage device in the sensing circuit, apply a reference signal to the non-volatile storage element and sense whether current conducted by the non-volatile element exceeds a pre-determined value while maintaining a constant voltage level on a bit line, the charge storage device is in communication with the bit line, the non-volatile storage element is in communication with the bit line.

A non-volatile storage system, comprising:

• a three dimensional memory structure comprising a plurality of non-volatile storage elements, the non-volatile storage elements have a charge storage area above a semiconductor substrate;
• a plurality of bit lines connected to the non-volatile storage elements;
• one or more managing circuits in communication with the non-volatile storage elements to program the non-volatile storage elements, the one or more managing circuits include one or more sensing circuits to verify and read one or more non-volatile storage elements while maintaining constant the voltage levels on the bit lines connected to the non-volatile storage elements, the one or more sensing circuits each comprise:
• a charge storage device,
• a pre-charging circuit in communication with the charge storage device in order to pre-charge the charge storage device,
• a bit line connection circuit that includes a communication switch that cuts off and connects the bit line to the charge storage device so that the charge storage device is capable of discharging the pre-charge through the bit line and the non-volatile storage element being sensed,
• a result detection circuit that determines a state of the charge storage device,
• a strobe timer circuit in communication with the result detection circuit, after a duration of time during a sensing operation the strobe timer circuit instructs the result detection circuit to respond to the state of the charge storage device, and
• a strobe time determination circuit in communication with the strobe timer circuit that, based on information about the position of the non-volatile element being sensed, determines the duration of time after which the strobe timer circuit will instruct the result detection circuit to respond to the state of the charge storage device.

A non-volatile storage system, comprising:

• a three dimensional memory structure comprising a plurality of non-volatile storage elements, the non-volatile storage elements have a charge storage area above a semiconductor substrate;
• a plurality of bit lines connected to the non-volatile storage elements;
• one or more managing circuits in communication with the non-volatile storage elements to program the non-volatile storage elements, the one or more managing circuits include one or more sensing circuits to verify and read the non-volatile storage elements while maintaining constant voltage levels on the bit lines connected to the non-volatile storage elements, the one or more sensing circuits each comprise:
• a charge storage device,
• a pre-charging circuit in communication with the charge storage device in order to pre-charge the charge storage device,
• a bit line connection circuit that includes a communication switch that cuts off and connects the bit line to the charge storage device so that the charge storage device is capable of discharging the pre-charge through the bit line and the non-volatile storage element,
• a result detection circuit that determines a state of the charge storage device;
• an adjustable voltage circuit in communication with the pre-charging circuit, the adjustable voltage circuit, based on information about the position of the non-volatile element being sensed, determines the pre-charge voltage to which the pre-charge circuit pre-charges the charge storage device, and
• a strobe timer circuit in communication with the result detection circuit, after a duration of time during a sensing operation the strobe timer circuit instructs the result detection circuit to respond to the state of the charge storage device.