Method of programming a 3-dimensional nonvolatile memory device based on a program order of a selected page and a location of a string selection line
AssigneeSamsung Electronics Co., Ltd.
InventorDonghun Kwak
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device comprises cell strings formed in a direction substantially perpendicular to a substrate and is configured to select memory cells in units corresponding to a string selection line. The device selects a page to be programmed among pages sharing a common word line, determines a level of a program voltage to be provided to the selected page according to a location of a string selection line corresponding to the selected page, and writes data in the selected page using the determined level of the program voltage.
Claims7
A method of operating a nonvolatile memory device comprising cell strings formed in a direction substantially perpendicular to a substrate and configured to select memory cells in units corresponding to a string selection line, the method comprising:
- selecting a page to be programmed among pages sharing a common word line;
- determining a level of a program voltage to be provided to the selected page according to a location of the string selection line corresponding to the selected page;
- and
- writing data in the selected page using the determined level of the program voltage.
Dependencies are inferred from the claim text.