US 8,942,033 B2 · Driving stage for phase change non-volatile memory devices provided with auto-calibration feature

Abstract

A driving stage for a phase change non-volatile memory device may include an output driving unit, which supplies an output driving current during programming of a memory cell, a driving-control unit, which receives an input current and generates a first control signal for controlling supply of the output driving current in such a way that a value thereof has a desired relation with the input current, and a level-shifter element, which carries out a level shift of a voltage of the first control signal for supplying to the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal. A calibration unit may carry out an operation of updating of the value of a shift voltage across the level-shifter element, as the value of the input current varies.

Claims28

Dependent claims

A driving stage for a phase change non-volatile memory device comprising:

an output driving unit configured to supply an output driving current during programming of at least one memory cell of the phase change non-volatile memory device;
a driving-control unit configured to receive an input current, and to generate a first control signal to control supply of the output driving current by said output driving unit so that the output driving current has a desired relation with the input current;
a level-shifter element coupled between said driving-control unit and said output driving unit, and configured to determine a shift voltage of the first control signal for supplying to said output driving unit a second control signal, the second control signal being increased with respect to and being a function of the first control signal;
and
a calibration unit configured to update the shift voltage as the input current varies.

2 more elements

A phase change non-volatile memory device comprising:

an array of memory cells;
and
a driving stage coupled to said array of memory cells and comprising
an output driving unit configured to supply an output driving current during programming of at least one memory cell of said array thereof,
a driving-control unit configured to receive an input current, and to generate a first control signal to control supply of the output driving current by said output driving unit so that the output driving current has a desired relation with the input current,
a level-shifter element coupled between said driving-control unit and said output driving unit, and configured to determine a shift voltage of the first control signal for supplying to said output driving unit a second control signal, the second control signal being increased with respect to and being a function of the first control signal, and
a calibration unit configured to update the shift voltage as the input current varies.

4 more elements

A method of making a driving stage for a phase change non-volatile memory device, the method comprising:

coupling an output driving unit to supply an output driving current during programming of at least one memory cell of the phase change non-volatile memory device;
coupling a driving-control unit to receive an input current, and to generate a first control signal to control supply of the output driving current by the output driving unit so that the output driving current has a desired relation with the input current;
coupling a level-shifter element between the driving-control unit and the output driving unit, the level-shifter element to determine a shift voltage of the first control signal for supplying to the output driving unit a second control signal, the second control signal being increased with respect to and being a function of the first control signal;
and
coupling a calibration unit to update the shift voltage as the input current varies.

2 more elements

Dependencies are inferred from the claim text.

Driving stage for phase change non-volatile memory devices provided with auto-calibration feature

Life of this patent

Driving stage for phase change non-volatile memory devices provided with auto-calibration feature

Life of this patent

Abstract

Claims28