Snubber circuit and method of using bipolar junction transistor in snubber circuit

A method for applying a bipolar junction transistor (BJT) to a snubber circuit, the method comprising:

• electrically connecting a base of the BJT to an emitter of the BJT;
• based on at least one junction characteristic between the base and the collector of the BJT, utilizing the BJT as a fast diode in the snubber circuit;
• and
• transferring leakage inductor energy to a capacitor of the snubber circuit rapidly, and pushing energy of the capacitor back to a source for energy recycling.

A snubber circuit, comprising:

• a capacitor, having a first terminal and a second terminal, wherein the first terminal of the capacitor is electrically connected to a first terminal of the snubber circuit;
• and
• a bipolar junction transistor (BJT), wherein one of an emitter and a collector of the BJT is electrically connected to the second terminal of the capacitor, another of the emitter and the collector of the BJT is electrically connected to a second terminal of the snubber circuit, and a base of the BJT is electrically connected to the emitter of the BJT;
• wherein the snubber circuit transfers leakage inductor energy to the capacitor rapidly and pushes energy of the capacitor back to a source for energy recycling.