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US 8,941,299 B2Granted
Light emitting device including semiconductor nanocrystals
AssigneeMassachusetts Institute of Technology
InventorsJianglong Chen, Vladimir Bulovic, Polina Anikeeva, Moungi G. Bawendi
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Abstract
A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
Claims26
A voltage-driven light emitting device comprising:
- a first electrode;
- a second electrode;
- an electroluminescent material including a wide band gap inorganic material;
- an insulating dielectric material disposed between the electroluminescent material and the first electrode, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the first electrode;
- an insulating dielectric material disposed between the electroluminescent material and the second electrode, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the second electrode;
- and
- a plurality of semiconductor nanocrystals adjacent to and in contact with the electroluminescent material and arranged to receive energy from the electroluminescent material, wherein the quantum efficiency of the semiconductor nanocrystals is greater than 30%, and wherein the plurality of semiconductor nanocrystals are arranged in a layer.
4 more elements
A method of forming a device, comprising:
- depositing an insulating dielectric material over a first electrode;
- depositing an electroluminescent material including a wide band gap inorganic material over the first electrode;
- depositing of a plurality of semiconductor nanocrystals in an arrangement adjacent to and in contact with the electroluminescent material to receive energy from the electroluminescent material, wherein the quantum efficiency of the semiconductor nanocrystals is greater than 30%, and wherein the plurality of semiconductor nanocrystals are arranged in a layer;
- and
- arranging a second electrode over the first electrode, the insulating dielectric material, the electroluminescent material, and the plurality of semiconductor nanocrystals;
- wherein the insulating dielectric material is disposed between the electroluminescent material and the first electrode, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the first electrode, and the insulating dielectric material is disposed between the electroluminescent material and the second electrode, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the second electrode.
3 more elements
A method of generating light comprising:
- providing a device including a first electrode;
- a second electrode;
- an electroluminescent material including a wide band gap inorganic material;
- an insulating dielectric material disposed on both sides of the electroluminescent material, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the first electrode and wherein the insulating dielectric material prevents current from passing between the electroluminescent material and the second electrode;
- and a plurality of semiconductor nanocrystals adjacent to and in contact with the electroluminescent material and arranged to receive energy from the electroluminescent material, wherein the quantum efficiency of the semiconductor nanocrystals is greater than 30%, and wherein the plurality of semiconductor nanocrystals are arranged in a layer;
- and
- applying a voltage-driven light-generating potential across the first electrode and the second electrode.
4 more elements
Dependencies are inferred from the claim text.