Semiconductor device and method of manufacturing thereof
AssigneeSamsung Electronics Co., Ltd.
InventorWoo-seok Shim
Life of this patent
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Abstract
A semiconductor device includes a substrate, a plurality of signal lines, and at least one power line. The substrate includes an integrated circuit unit. The signal lines are disposed on the substrate and are configured to provide the integrated circuit unit with signals. The power line is disposed on the substrate and is configured to provide the integrated circuit unit with power supply on the substrate. The power line includes a stacked structure including a first power line and a second power line stacked on the first power line.
Claims18
A semiconductor device comprising:
- a substrate comprising an integrated circuit unit;
- a plurality of signal lines disposed on the substrate and configured to provide the integrated circuit unit with signals;
- and
- at least one power line disposed on the substrate and configured to provide power to the integrated circuit unit,
- wherein the at least one power line includes a stacked structure comprising a first power line and a second power line stacked on the first power line,
- and wherein a bottom surface of the second power line contacts a top surface of the first power line.
A semiconductor device comprising:
- a plurality of signal lines disposed on a substrate;
- a first power line disposed on the substrate and extending in a first direction, wherein a top surface of the first power line is substantially level with top surfaces of the plurality of signal lines;
- a second power line stacked on the first power line and extending in the direction;
- and
- a bottom pad disposed on the substrate, wherein a top surface of the bottom pad is substantially level with the top surfaces of the plurality of signal lines.
A method of manufacturing a semiconductor device comprising:
- forming a signal line and a first power line on a substrate, wherein a width of the signal line is less than that of the first power line, and wherein a top surface of the signal line is substantially level with that of the first power line;
- forming an insulating interlayer on the signal line and the first power line;
- and
- forming a second power line on the first power line, wherein the second power line penetrates the insulating interlayer and a top surface of the second power line is substantially level with that of the insulating interlayer,
- wherein the first power line is in direct contact with the second power line.
Dependencies are inferred from the claim text.