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US 8,941,241 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDae Sung Eom
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes at least 4 conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines. First contact pads may be coupled to the respective ends of the conductive lines of two of the 4 conductive line groups in a first direction, and second contact pads may be coupled to the respective ends of the conductive lines of the remaining 2 of the 4 conductive line groups in a second direction opposite to the first direction.
Claims20
A semiconductor device, comprising:
- first to fourth conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines;
- first contact pads coupled to respective ends of the conductive lines of the first and third conductive line groups in a first direction;
- and
- second contact pads coupled to respective ends of the conductive lines of the second and fourth conductive line groups in a second direction opposite to the first direction,
- wherein odd-numbered conductive line groups of the first to fourth conductive line groups are extended in the first direction, and
- even-numbered conductive line groups of the first to fourth conductive line groups are extended in the second direction.
3 more elements
A semiconductor device, comprising:
- first to eighth conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines;
- first contact pads coupled to respective ends of first, second, fifth, and sixth conductive lines, respectively corresponding to the first, the second, the fifth, and the sixth conductive line groups, in a first direction;
- and
- second contact pads coupled to respective ends of third, fourth, seventh, and eighth conductive lines, respectively corresponding to the third, the fourth, the seventh, and the eighth conductive line groups, in a second direction opposite to the first direction.
1 more element
A semiconductor device, comprising:
- first, second, fifth, and sixth conductive line groups formed over one memory cell block region and over a first contact pad region on one side of the memory cell block region;
- third, fourth, seventh, and eighth conductive line groups formed over the memory cell block region and over a second contact pad region on the other side of the memory cell block region;
- first contact pads coupled to respective ends of first, second, fifth, and sixth conductive lines, included in the first, the second, the fifth, and the sixth conductive line groups, over the first contact pad region;
- and
- second contact pads coupled to respective ends of third, fourth, seventh, and eighth conductive lines, included in the third, the fourth, the seventh, and the eighth conductive line groups, over the second contact pad region,
- wherein the first, the second, the fifth, and the sixth conductive lines and the third, the fourth, the seventh, and the eighth conductive lines are extended and arranged in opposite directions to adjacent conductive line groups and the first to eighth conductive lines of the first to eighth conductive line groups are extended and arranged in opposite directions to adjacent conductive line groups so that the first contact pads do not overlap with each other and the second contact pads do not overlap with each other.
3 more elements
Dependencies are inferred from the claim text.