Semiconductor package and manufacturing method

A semiconductor package comprising:

• a core substrate made of a reinforcement-containing insulating resin, the core substrate including a first surface, a second surface opposite to the first surface, and a first opening penetrating the core substrate from the first surface to the second surface;
• a metal plate that covers an open end of the first opening on the first surface of the core substrate, the metal plate exposing an outer edge of the first surface of the core substrate and covering the first surface of the core substrate except for the outer edge;
• a conductive layer that covers the second surface of the core substrate and including an opening communicating with the first opening, the conductive layer exposing an outer edge of the second surface of the core substrate and covering the second surface of the core substrate except for the outer edge and the first opening;
• an electronic component bonded to a first surface of the metal plate exposed through the first opening;
• a first insulating layer that covers a second surface of the metal plate opposite to the first surface of the metal plate, a side surface of the metal plate, and the outer edge of the first surface of the core substrate;
• a second insulating layer that fills the first opening, the second insulating layer covering the outer edge of the second surface of the core substrate, the conductive layer, and the electronic component;
• and
• a first wiring structure stacked on the second insulating layer, the first wiring structure including a first wiring layer electrically connected to the electronic component,
• wherein the metal plate is thinner than the electronic component, and a total thickness of the conductive layer and the core substrate is equal to or larger than a thickness of the electronic component.