Semiconductor devices having through-vias and methods for fabricating the same

A semiconductor device comprising:

• a substrate having an active surface and a non-active surface on a side of the substrate that is opposite to the active surface;
• a via-hole penetrating the substrate;
• a first via-insulating layer extending along an inner sidewall of the via-hole from the active surface to the non-active surface;
• a through-via disposed in the via-hole and surrounded by the first via-insulating layer, a bottom end of the through-via not reaching the non-active surface;
• a lower insulating layer on the non-active surface of the substrate;
• and
• a terminal disposed on the lower insulating layer and connected to the bottom end of the through-via,
• wherein the terminal includes a protrusion extending toward the bottom end of the through-via and connected to the bottom end of the through-via, and
• wherein the first via-insulating layer electrically insulates the protrusion from the substrate.