Display panel and display device
AssigneePanasonic Liquid Crystal Display Co., Ltd.
InventorKazuo Kita
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AssigneePanasonic Liquid Crystal Display Co., Ltd.
InventorKazuo Kita
Estimating the term…
In a transparent substrate (10), there are formed a semiconductor layer (14) formed of an oxide semiconductor, the semiconductor layer (14) functioning as a channel portion of a TFT (2); an electrode (16) formed of a transparent conductive material and located over the semiconductor layer (14), and a light-shielding conductor (17) formed on the electrode (16), the light-shielding conductor being formed of a material which has a conductivity higher than that of the transparent conductive material and which has light-shielding property, the light-shielding conductor covering the semiconductor layer (14). This structure can inhibit exposure of the oxide semiconductor which forms the channel portion toward a light, and can lower the resistance of the electrode formed of the transparent conductive material.
A display panel, comprising:
A display panel, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
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Insulated-gate field-effect transistors [IGFET]: thin-film transistors [TFT]
Having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device: having…
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
About 6 years 4 months of term left · ends 21 Feb 2033 (estimated)
The present application claims priority from Japanese application JP 2011-271138 filed on Dec. 12, 2011, the content of which is hereby incorporated by reference into this application.
1. Field of the Invention
The present invention relates to a display panel and a display device in which an oxide semiconductor is used in a channel portion of a thin film transistor.
In the accompanying drawings:
FIG. 1 is a schematic view of a liquid crystal display device according to an embodiment of the present invention;
FIG. 2 is a plan view of a first transparent substrate composing a liquid crystal display panel according to a first embodiment of the present invention;
An embodiment of the present invention is described in the following with reference to the attached drawings. FIG. 1 is a schematic view of a liquid crystal display device 100 according to the embodiment of the present invention.
As illustrated in FIG. 1, the liquid crystal display device 100 includes a liquid crystal display panel 1 and a backlight device 102 for illuminating to a back surface of the liquid crystal display panel 1. The liquid crystal display device 100 further includes a controller 103, a gate driver circuit 104, and a source driver circuit 105. A video signal is input to the controller 103 from a peripheral device. The controller 103 generates a timing control signal from the video signal, and outputs the timing control signal to the gate driver circuit 104. Based on the timing control signal, the gate driver circuit 104 applies a gate voltage to a gate electrode line 11 to be described later. Further, the controller 103 generates from the video signal a signal indicating a gray scale value of each pixel of the liquid crystal display panel 1, and outputs the signal to the source driver circuit 105. Based on the input signal, the source driver circuit 105 applies a pixel voltage corresponding to the gray scale value to a source electrode line 12 to be described later.
FIG. 2 is a plan view of a first transparent substrate 10 composing the liquid crystal display panel 1 according to a first embodiment of the present invention. FIG. 3 and FIG. 4 are sectional views of the liquid crystal display panel 1 taken along the line III-III and the line IV-IV, respectively, of FIG. 2. FIG. 2 shows a display region in which pixels are formed, and a peripheral region (region outside the display region) of the first transparent substrate 10. In FIG. 2, thin film transistors 3 which are formed in the peripheral region and which compose the gate driver circuit 104 (specifically, a shift register circuit) are illustrated.