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US 8,941,199 B2Granted
Image sensors
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Ho Lee, Jung-Chak Ahn
Life of this patent
Estimating the term…
Abstract
An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.
Claims19
An image sensor, comprising:
- a plurality of photo detecting elements in an upper portion of a semiconductor substrate, the plurality of photo detecting elements being separate from each other;
- and
- a backside protection pattern in a lower portion of the semiconductor substrate between the plurality of photo detecting elements,
- wherein the backside protection pattern is doped with impurities which have the same conductivity type as a conductivity type of impurities in the semiconductor substrate, and
- wherein a doping density of the backside protection pattern is higher than a doping density of the semiconductor substrate.
2 more elements
An image sensor, comprising:
- a plurality of photo detecting elements in an upper portion of a semiconductor substrate, the plurality of photo detecting elements being separate from each other;
- a backside protection pattern in a lower portion of the semiconductor substrate between the plurality of photo detecting elements;
- and
- an isolation pattern on the backside protection pattern in the semiconductor substrate between the plurality of photo detecting elements, wherein a ground voltage is provided to the image sensor through the backside protection pattern and the isolation pattern.
1 more element
An image sensor, comprising:
- a plurality of photo detecting elements in an upper portion of a semiconductor substrate, the plurality of photo detecting elements being separate from each other;
- a first backside protection pattern in a lower portion of the semiconductor substrate between the plurality of photo detecting elements;
- and
- a plurality of second backside protection patterns in the lower portion of the semiconductor substrate under the plurality of photo detecting elements, each second backside protection pattern of the plurality of second backside protection patterns having a different thickness than the first backside protection pattern,
- wherein the first backside protection pattern is doped with impurities which have the same conductivity type as a conductivity type of impurities in the semiconductor substrate, and
- wherein a doping density of the first backside protection pattern is higher than a doping density of the semiconductor substrate.
3 more elements
An image sensor, comprising:
- a photo detecting element in an active area of a semiconductor substrate;
- and
- a backside protection pattern in a surrounding area of the semiconductor substrate, the active area surrounded by the surrounding area,
- wherein the backside protection pattern is doped with impurities which have the same conductivity type as a conductivity type of impurities in the semiconductor substrate, and
- wherein a doping density of the backside protection pattern is higher than a doping density of the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.