Solid-state imaging device, manufacturing method thereof, and electronic apparatus

A method of manufacturing a solid-state imaging device comprising:

• providing a plurality of photoelectric conversion portions which receive incident light through a light sensing surface so as to correspond to a plurality of pixels in a semiconductor substrate;
• and
• forming a pixel separation portion, which electrically separates the plurality of pixels, between the plurality of pixels in an inner portion of the semiconductor substrate, wherein an impurity region is formed opposite the plurality of photoelectric conversion portions,
• and wherein the forming of the pixel separation portion includes providing at least a pinning layer and a light shielding layer in an inner portion of a trench which is provided on a side portion of each of the photoelectric conversion portions in an incident surface side of the semiconductor substrate into which the incident light enters,
• a first trench and a second trench having a width wider than that of the first trench in a portion shallower than the first trench in the semiconductor substrate are formed as the trench, wherein the first trench and the second trench are both provided within the impurity region,
• the pinning layer is formed so as to cover an inner portion of the first trench and the second trench and an inside surface of the first trench and the second trench,
• the light shielding layer is formed so as to bury an inner portion of the second trench at least via the pinning layer, and
• a light shielding film is formed with a light incident surface and a non-light incident surface, wherein the light shielding film is provided on a side of the light incident surface of the semiconductor substrate and in which an opening through which the incident light passes the light sensing surface is formed and wherein the light incident surface of the light shielding film is covered by a substantially transparent planarized film and the non-light incident surface of the light shielding film is covered entirely by a silicon oxide insulating film.

An electronic apparatus comprising:

• a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receives incident light through a light sensing surface;
• and
• a pixel separation portion that is provided between the plurality of pixels in an inner portion of the semiconductor substrate and electrically separates the plurality of pixels, wherein an impurity region is formed opposite the plurality of photoelectric conversion portions,
• wherein at least a pinning layer and a light shielding layer are provided in an inner portion of a trench which is provided on a side portion of each of the photoelectric conversion portions in an incident surface side of the semiconductor substrate into which the incident light enters,
• the trench includes a first trench, and a second trench having a width wider than that of the first trench in a portion shallower than the first trench in the semiconductor substrate, wherein the first trench and the second trench are both provided within the impurity region,
• the pinning layer is formed in an inner portion of the first trench and the second trench so as to cover an inside surface of the first trench and the second trench,
• the light shielding layer is formed so as to bury an inner portion of the second trench at least via the pinning layer, and
• a light shielding film with a light incident surface and a non-light incident surface, wherein the light shielding film is provided on a side of the light incident surface of the semiconductor substrate and in which an opening through which the incident light passes the light sensing surface is formed and wherein the light incident surface of the light shielding film is covered by a substantially transparent planarized film and the non-light incident surface of the light shielding film is covered entirely by a silicon oxide insulating film.