Precessional reversal in orthogonal spin transfer magnetic RAM devices

A logic component, comprising:

• a perpendicular magnetized polarizing layer having a magnetic vector and two or more stable configurations, wherein the perpendicular magnetized polarizing layer that provides a first spin-torque based upon an active configuration;
• an in-plane magnetized free layer;
• an element used to change the magnetic vector of the perpendicular magnetized polarizing layer to be magnetized up or down along an axis perpendicular to a plane of the perpendicular magnetized polarizing layer;
• and
• a reference layer that provides a second spin-torque, wherein the first spin-torque and the second spin-torque combine, wherein the magnetic vector of the perpendicular magnetized polarizing layer affects combination of the first spin-torque and the second spin-torque, wherein the in-plane magnetized free layer and the reference layer form a magnetic tunnel junction, and wherein the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer.