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US 8,941,195 B2Granted
Semiconductor device having insulating layer formed through oxidization of electrode
AssigneeSK hynix Inc.
InventorsMin Suk Lee, Bo Kyoung Jung
Life of this patent
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Abstract
In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.
Claims5
A semiconductor device, comprising:
- an interlayer insulating layer;
- a contact plug and a first electrode that are each stacked in a hole penetrating the interlayer insulating layer;
- a second electrode formed on the first electrode;
- a magnetic tunnel junction element formed on the second electrode;
- a third electrode formed on the magnetic tunnel junction element;
- and
- an insulating layer formed on a portion of the interlayer insulating layer excluding the hole penetrating the interlayer insulating layer by oxidizing the second electrode that is exposed at both sides of the magnetic tunnel junction element,
- wherein an etching damage of the third electrode is reduced by the oxidizing of the second electrode instead of an etching of the second electrode, and
- wherein the insulating layer and the second electrode are disposed in a same layer.
6 more elements
Dependencies are inferred from the claim text.