Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body

A semiconductor arrangement, comprising:

• a semiconductor body;
• a power transistor arranged in a first device region of the semiconductor body and comprising at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric;
• a further semiconductor device arranged in a second device region of the semiconductor body, the second device region comprising a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type, the further semiconductor device comprising device regions arranged in the first semiconductor region;
• and
• a second semiconductor region of the first doping type having a higher doping concentration than the first semiconductor region and arranged between the well-like structure and the first semiconductor region.