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US 8,941,186 B2Granted
Semiconductor device having vertical type transistor
AssigneePS4 Luxco S.a.r.l.
InventorHiroyuki Fujimoto
Life of this patent
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Abstract
A semiconductor device includes: a first vertical type transistor having a first lower diffusion layer, a first upper diffusion layer, and a gate electrode; a second vertical type transistor having a second lower diffusion layer, a second upper diffusion layer, and a second gate electrode; a gate wiring connected to the first and second gate electrodes; a first wiring connected to the first lower diffusion layer and second upper diffusion layer; and a second wiring connected to the first upper diffusion layer and second lower diffusion layer.
Claims14
A semiconductor device comprising:
- a first vertical type transistor including:
- a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
- a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
- a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
- a first gate insulating film covering a side surface of the first semiconductor pillar;
- and
- a first gate electrode covering the first gate insulating film;
- a second vertical type transistor including:
- a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate;
- a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
- a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
- a second gate insulating film covering a side surface of the second semiconductor pillar;
- and
- a second gate electrode covering the second gate insulating film;
- a gate wiring electrically connected to the first and second gate electrodes;
- a first wiring electrically connected to the first lower diffusion layer and second upper diffusion layer;
- and
- a second wiring electrically connected to the first upper diffusion layer and second lower diffusion layer,
- wherein:
- the first and second vertical type transistors are electrically connected between first and second nodes,
- a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
- a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
19 more elements
A semiconductor device comprising:
- a first vertical type transistor including:
- a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
- a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
- a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
- a first gate insulating film covering a side surface of the first semiconductor pillar;
- and
- a first gate electrode covering the first gate insulating film;
- and
- a second vertical type transistor including:
- a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate;
- a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
- a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
- a second gate insulating film covering a side surface of the second semiconductor pillar;
- and
- a second gate electrode covering the second gate insulating film, wherein:
- the first and second vertical type transistors are electrically connected in parallel between first and second nodes,
- the first node is electrically connected to the first lower diffusion layer and second upper diffusion layer,
- the second node is electrically connected to the first upper diffusion layer and second lower diffusion layer,
- a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
- a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
17 more elements
A semiconductor device comprising:
- a first vertical type transistor including:
- a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
- a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
- a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
- a first gate insulating film covering a side surface of the first semiconductor pillar;
- and a first gate electrode covering the first gate insulating film;
- and
- a second vertical type transistor including:
- a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate;
- a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
- a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
- a second gate insulating film covering a side surface of the second semiconductor pillar;
- and
- a second gate electrode covering the second gate insulating film,
- wherein:
- the first and second vertical type transistors are electrically connected in series between first and second nodes,
- the first node is electrically connected to one of the first lower diffusion layer and the second upper diffusion layer,
- the second node is electrically connected to the second lower diffusion layer when the first node is electrically connected to the first lower diffusion layer or electrically connected to the second upper diffusion layer when the first node is connected to the first upper diffusion layer,
- a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
- a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
17 more elements
Dependencies are inferred from the claim text.