Semiconductor devices having different gate oxide thicknesses

A method of manufacturing a semiconductor structure comprising multiple finFET devices each comprising different thickness gate oxides and formed in a semiconductor substrate, the method comprising:

• depositing a first dielectric layer on top of the semiconductor substrate, on top of a first fin, and on top of a second fin;
• forming a first dummy gate stack comprising a first dummy gate located on top of a first gate oxide above the first fin, and a first pair of dielectric spacers disposed on opposite sides of the first dummy gate stack;
• forming a second dummy gate stack comprising a second dummy gate located on top of a second gate oxide above the second fin, and a second pair of dielectric spacers disposed on opposite sides of the second dummy gate stack;
• removing the first dummy gate and the second dummy gate selective to the first and second gate oxides, and creating a first opening defined by exposed sidewalls of the first pair of dielectric spacers and a second opening defined by exposed sidewalls of the second pair of dielectric spacers;
• masking a portion of the semiconductor structure comprising the second fin, and removing the first gate oxide from atop the first fin;
• and
• depositing a second dielectric layer within the first opening, and within the second opening, the second dielectric layer being located on top of the first fin and adjacent to the exposed sidewalls of the first pair of dielectric spacers, the second dielectric layer being located on top of the second gate oxide and adjacent to the exposed sidewalls of the second pair of dielectric spacers.