US 8,941,165 B2 · Methods of fabricating integrated circuit capacitors having u-shaped lower capacitor electrodes

Abstract

Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Claims18

Dependent claims

An integrated circuit device, comprising:

a substrate having a first electrically insulating layer thereon;
a contact hole extending at least partially through the first electrically insulating layer;
an electrically conductive polysilicon landing pad in said contact hole, said landing pad having a first surface thereon that is recessed relative to an upper surface of the first electrically insulating layer;
a U-shaped lower capacitor electrode consisting of a single material, said U-shaped lower capacitor electrode extending into the contact hole and directly contacting at least a portion of the first surface of said electrically conductive polysilicon landing pad to provide a direct electrical connection therebetween, said first surface having a non-planar profile when viewed in transverse cross-section;
a capacitor dielectric layer lining an inner surface of said U-shaped lower capacitor electrode including a portion of said U-shaped lower capacitor electrode that is below the upper surface of the first electrically insulating layer;
and
an upper capacitor electrode on said capacitor dielectric layer.

4 more elements

Dependencies are inferred from the claim text.

Methods of fabricating integrated circuit capacitors having u-shaped lower capacitor electrodes

Life of this patent

Methods of fabricating integrated circuit capacitors having u-shaped lower capacitor electrodes

Life of this patent

Abstract

Claims18