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US 8,941,162 B2Granted
Semiconductor device, method for forming the same, and data processing system
AssigneePS4 Luxco S.a.r.l.
InventorMitsunari Sukekawa
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate having a first groove, a word line in the first groove, and a buried insulating film in the first groove. The buried insulating film covers the word line. The buried insulating film comprises a silicon nitride film.
Claims20
A semiconductor device comprising:
- an active semiconductor region;
- a groove selectively formed to cross the active semiconductor region so that first and second portions sandwiching the groove are defined in the active semiconductor region;
- source and drain regions formed in the first and second portions, respectively;
- a word line partially filling the groove with an intervention of a gate insulating film between the word line and the groove;
- a buried insulating film filling the groove to cover the word line;
- a bit line elongated in a direction crossing the word line, the bit line including a portion that is formed over and electrically connected with one of the source and drain regions;
- a contact plug formed over and electrically connected with the other of the source and drain regions so that a gap is formed over the buried insulating film and between the contact plug and the portion of the bit line;
- a capacitor formed over and electrically connected with the contact plug;
- and
- first, second and third insulating films in the gap, the first insulating film being sandwiched between the second and third insulating films, the second insulating film being in contact with the portion of the bit line and penetrating through the first insulating film to contact the third insulating film, and the third insulating film contacting the contact plug and the first insulating film;
- wherein each of the buried insulating film and the second and third insulating films comprises a silicon nitride film, and
- wherein the first insulating film is different in material from the silicon nitride film.
9 more elements
A semiconductor device comprising:
- an active semiconductor region;
- a groove crossing the active semiconductor region to define source and drain regions;
- a word line partially filling the groove with an intervening gate insulating film between the word line and the groove;
- a buried insulating film filling the groove and covering the word line;
- a bit line elongated in a direction crossing the word line, the bit line including a portion that is formed over and electrically connected with one of the source and drain regions;
- a contact plug formed over and electrically connected with the other of the source and drain regions so that a gap is formed over the buried insulating film and between the contact plug and the portion of the bit line;
- a capacitor formed over and electrically connected with the contact plug;
- and
- first, second and third insulating films in the gap, the first insulating film being sandwiched between the second and third insulating films, the second insulating film penetrating through a gap in the first insulating film to contact the third insulating film so as to form an H-shaped configuration;
- wherein each of the buried insulating film and the second and third insulating films comprises a silicon nitride film, and
- wherein the first insulating film is different in material from the silicon nitride film.
8 more elements
Dependencies are inferred from the claim text.