Semiconductor device including finFET and diode having reduced defects in depletion region

A semiconductor device, comprising:

• a first substrate portion including a first active semiconductor layer defining at least one semiconductor fin and a first polycrystalline layer formed directly on the first active semiconductor layer, the first semiconductor layer defining at least one semiconductor gate;
• and
• a second substrate portion separated from the first substrate portion by a predetermined distance, the second substrate portion including a doped region interposed between a second active semiconductor region and an oxide layer, the doped region including a first doped area and a second doped area separated by the first doped region to define a depletion region;
• and
• a second polycrystalline material formed on an upper surface of the oxide layer to define a first ion implantation area adjacent a first side of the second polycrystalline material and a second ion implantation area adjacent a second side of the second polycrystalline material opposite the first side,
• wherein the depletion region is integrally formed from the doped region, and wherein the first doped area, the second doped area and the depletion region define a diode.