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US 8,941,157 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsHyung-Hwan Kim, Seong-Su Lim, Sung-Eun Park, Seung-Seok Pyo, Min-Cheol Kang
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Abstract
A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.
Claims7
A semiconductor device, comprising:
- a plurality of first conductive patterns separated by a damascene pattern;
- a second conductive pattern buried in the damascene pattern;
- and
- a spacer comprising an air gap between the second conductive pattern and the first conductive patterns,
- wherein the spacer further comprises a first spacer and a second spacer, and the air gap is disposed between the first spacer and the second spacer,
- wherein the first spacer comprises a silicon nitride layer and the second spacer comprises an oxide layer.
3 more elements
Dependencies are inferred from the claim text.