Self-aligned dielectric isolation for FinFET devices

A method comprising:

• forming a set of fin structures on top of a substrate, said set of fin structures being part of one or more fin-type field-effect-transistors (FinFETs);
• forming a first dielectric layer directly on top of said set of fin structures and on top of said substrate, said first dielectric layer having a height profile that is complement to a pattern of an insulating structure fully surrounding said set of fin structures;
• forming a second dielectric layer in areas defined by said pattern to create said insulating structure;
• forming a set of gates of said one or more FinFETs perpendicularly across said set of fin structures, having two ends of said set of gates landing directly on top of said insulating structure;
• and
• epitaxially forming source and drain of said one or more FinFETs from portions of said substrate adjacent to said set of fin structures.

A method comprising:

• forming a set of device features on top of a substrate, said set of device features including at least a first group of device features and a second group of device features;
• forming a first dielectric layer directly on top of said set of device features and on top of said substrate, thereby creating a height profile of said first dielectric layer measured from a top surface of said substrate, said height profile being associated with and creating a pattern of an insulating structure that fully surrounds said set of device features, said pattern of said insulating structure separating said first group of device features from said second group of device features in two enclosures;
• and
• forming a second dielectric layer in areas that are defined by said pattern to create said insulating structure,
• wherein forming said first dielectric layer comprises depositing a conformal dielectric layer as said first dielectric layer, whose thickness is less than half of a shortest distance between said first and said second groups of device features, creating said height profile that complements a height profile of said insulating structure.