Non-volatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJung-Ryul Ahn
Life of this patent
Estimating the term…
Abstract
A method for fabricating a non-volatile memory device includes: providing a substrate which includes a cell region where a plurality of memory cells are to be formed and a peripheral circuit region where a plurality of peripheral circuit devices are to be formed; forming the memory cells that are stacked perpendicularly to the substrate of the cell region; and forming a first conductive layer for forming a gate electrode of a selection transistor over the memory cells while forming the first conductive layer in the peripheral circuit region simultaneously, wherein the first conductive layer of the peripheral circuit region functions as a resistor body of at least one peripheral circuit device of the peripheral circuit devices.
Claims7
A memory device comprising a substrate having a cell region and a peripheral circuit region, comprising:
- first gate electrodes of a plurality of memory cells, the first gate electrodes are stacked over the cell region of the substrate so that the first gate electrodes are arranged in a vertical direction to the substrate;
- a second gate electrode of a selection transistor, the second gate electrode is formed over the first gate electrodes;
- a resistor body and a peripheral circuit device formed over the peripheral circuit region of the substrate, wherein the second gate electrode and the resistor body include a same material, and wherein the resistor body and the peripheral circuit device are disposed at different levels in the vertical direction.
Dependencies are inferred from the claim text.