US 8,941,149 B2Granted

Semiconductor device

AssigneeFurukawa Electric Co., Ltd.

InventorsJiang Li, Keishi Takaki, Ryosuke Tamura, Yoshihiro Ikura

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Abstract

A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer.

Claims17

Dependent claims

A semiconductor device, comprising:

a first semiconductor layer that is formed on a substrate and formed of a nitride-based semiconductor;
a second semiconductor layer that is formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer;
a first electrode that is formed on a surface of the second semiconductor layer;
a second electrode that is formed on the surface of the second semiconductor layer;
an inter-electrode insulator film that is formed between the first electrode and the second electrode on the surface of the second semiconductor layer;
and
a dielectric constant adjustment layer that is formed on the inter-electrode insulator film and formed of an electric insulator, wherein
the first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and
the dielectric constant adjustment layer has a first dielectric constant adjustment layer that contacts a lateral end portion of the field plate portion and a second dielectric constant adjustment layer formed on the first dielectric constant adjustment layer,
wherein when a dielectric constant of the first dielectric constant adjustment layer is ∈r1 and a dielectric constant of the second dielectric constant adjustment layer is ∈r2:1.5<∈r2<9;
and ∈r1≧∈r2.

8 more elements

A semiconductor device, comprising:

a first semiconductor layer that is formed on a substrate and formed of a nitride-based semiconductor;
a second semiconductor layer that is formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer;
a first electrode that is formed on a surface of the second semiconductor layer;
a second electrode that is formed on the surface of the second semiconductor layer;
an inter-electrode insulator film that is formed between the first electrode and the second electrode on the surface of the second semiconductor layer;
and
a dielectric constant adjustment layer that is formed on the inter-electrode insulator film and formed of an electric insulator, wherein
the first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and
the dielectric constant adjustment layer has a first dielectric constant adjustment layer that contacts a lateral end portion of the field plate portion and a second dielectric constant adjustment layer formed on the first dielectric constant adjustment layer,
wherein a ratio of an electric charge of a carrier pulled out from the lateral end portion of the field plate portion of the first electrode through the inter-electrode insulator film and the first dielectric constant adjustment layer, to an electric charge of a carrier pulled out from a bottom surface of the first electrode is 65% or larger.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/938,557Filed 10 Jul 2013
Priority: JP 2012-23842929 Oct 2012
Published: US 2014/0117410 A11 May 2014
Granted: 27 Jan 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 8/60
Diodes: schottky-barrier diodes
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 62/824
Heterojunctions: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN