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US 8,941,148 B2Granted
Semiconductor device and method
AssigneeInfineon Technologies Austria AG
InventorGerhard Prechtl
Life of this patent
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Abstract
A semiconductor device is disclosed. One embodiment includes a lateral HEMT (High Electron Mobility Transistor) structure with a heterojunction between two differing group III-nitride semiconductor compounds and a layer arranged on the heterojunction. The layer includes a group III-nitride semiconductor compound and at least one barrier to hinder current flow in the layer.
Claims22
A semiconductor device, comprising:
- a lateral HEMT structure comprising a first load electrode, a second load electrode, a control electrode, a heterojunction between two differing group III-nitride semiconductor compounds, and
- a layer arranged on the heterojunction, the layer comprising a group III-nitride semiconductor compound and at least one barrier to hinder leakage current flow in the layer between the control electrode and the first and second load electrodes, the barrier surrounded on two sides by and spaced from the control electrode by the group III-nitride semiconductor compound so that the barrier is not in contact with the control electrode.
A semiconductor device, comprising:
- a first load electrode;
- a second load electrode;
- a control electrode;
- a first group III-nitride semiconductor layer;
- a second group III-nitride semiconductor layer arranged on the first group III-nitride semiconductor layer;
- and
- a third layer comprising a group III-nitride semiconductor compound arranged on the second group III-nitride semiconductor layer and a dielectric region positioned in the third layer, the dielectric region spaced from the control electrode by a portion of the third layer and locally interrupting a continuity of the third layer to hinder a flow of leakage current between the control electrode and the first and second load electrodes,
- wherein the first load electrode and the second load electrode are in contact with the first group III-nitride semiconductor layer and the control electrode is in contact with the second group III-nitride semiconductor layer.
5 more elements
A semiconductor device comprising:
- a lateral HEMT, including a heterojunction formed between two differing group III-nitride semiconductors;
- and
- a barrier for reducing leakage current in a cap layer between a control electrode and a first load electrode, the barrier positioned within the cap layer and underneath the cap layer and spaced from the control electrode by a portion of the cap layer so that the barrier is not in contact with the control electrode.
A semiconductor device, comprising:
- a source electrode having an elongate, strip form;
- a drain electrode having an elongate, strip form;
- a gate electrode having an elongate, strip form;
- a first group III-nitride semiconductor layer;
- a second group III-nitride semiconductor layer arranged on the first group III-nitride semiconductor layer;
- and
- a third layer comprising a group III-nitride semiconductor compound arranged on the second group III-nitride semiconductor layer and a barrier structure arranged in the third layer and spaced from the gate electrode by a portion of the third layer so that the barrier is not in contact with the gate electrode, the barrier structure locally interrupting a continuity of the third layer, the barrier structure including two elongate trenches arranged adjacent and spaced a distance from either side of the long sides of the gate electrode.
4 more elements
Dependencies are inferred from the claim text.