Semiconductor light emitting device and method for manufacturing same

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a stacked body on a substrate, the stacked body including a plurality of semiconductor layers, a p-side electrode, and an n-side electrode, the plurality of semiconductor layers being partitionally separated by a dicing region and including gallium nitride, each of the plurality of semiconductor layers including a first surface contacting the substrate, a second surface opposite to the first surface, and a light emitting layer, the p-side electrode being provided on each of the semiconductor layers, the n-side electrode being provided on each of the semiconductor layers;
• forming a first insulating layer on the second surface, the first insulating layer including a first via communicating with the p-side electrode, a second via communicating with the n-side electrode, and an interconnect surface provided on a side opposite to each of the semiconductor layer;
• forming a p-side interconnect unit on the interconnect surface of the first insulating layer, the p-side interconnect unit being electrically connected to the p-side electrode through the first via;
• forming an n-side interconnect unit on the interconnect surface apart from the p-side interconnect unit, the n-side interconnect unit being electrically connected to the n-side electrode through the second via;
• forming a second insulating layer between the p-side interconnect unit and the n-side interconnect unit;
• exposing the first surface by removing the substrate;
• forming an inorganic film on the exposed first surface, the inorganic film having main components of silicon and nitrogen and a refractive index between a refractive index of the gallium nitride and a refractive index of air;
• and
• cutting the stacked body in the dicing region.